Research on Anti-inflammatory Targets and Mechanisms of alkaloids in Picrasma quassioides Benn Through Network Pharmacology

Abstract This study aimed to investigate the molecular mechanism of Picrasma quassioides Benn against inflammation by means of network pharmacology. The paper will provide a reference for multi-target and multi-channel treatment of inflammation with traditional Chinese medicine. Through screening and analysis, 11 active ingredients and 109 anti-inflammation prediction targets were obtained and constructed a compound-target network. The targets such as VEGFA, TLR4 and STAT3 may play a crucial role. Network enrichment analysis showed that the 109 potential targets constitute a number of pathways or inflammatory reactions closely related to inflammation, including NF-κB signaling pathway and MAPK signaling pathway. The docking results indicated that the binding energy of Picrasidine Y and the inflammatory factors VEGFA is the highest. This study predicted the role of multiple active compounds in the alkaloids of Picrasma in the inflammatory response, and provided a theoretical basis for the anti-inflammatory mechanism of Picrasma

Step-Climbing Epitaxy of Layered Materials with Giant Out-of-Plane Lattice Mismatch.

Heteroepitaxy with large lattice mismatch remains a great challenge for high-quality epifilm growth. Although great efforts have been devoted to epifilm growth with an in-plane lattice mismatch, the epitaxy of 2D layered crystals on stepped substrates with a giant out-of-plane lattice mismatch is seldom reported. Here, taking the molecular-beam epitaxy of 2D semiconducting Bi2 O2 Se on 3D SrTiO3 substrates as an example, a step-climbing epitaxy growth strategy is proposed, in which the n-th (n = 1, 2, 3…) epilayer climbs the step with height difference from out-of-plane lattice mismatch and continues to grow the n+1-th epilayer. Step-climbing epitaxy can spontaneously relax and release the strain from the out-of-plane lattice mismatch, which ensures the high quality of large-area epitaxial films. Wafer-scale uniform 2D Bi2 O2 Se single-crystal films with controllable thickness can be obtained via step-climbing epitaxy. Most notably, one-unit-cell Bi2 O2 Se films (1.2 nm thick) exhibit a high Hall mobility of 180 cm2 V-1 s-1 at room temperature, which exceeds that of silicon and other 2D semiconductors with comparable thickness. As an out-of-plane lattice mismatch is generally present in the epitaxy of layered materials, the step-climbing epitaxy strategy expands the existing epitaxial growth theory and provides guidance toward the high-quality synthesis of layered materials.